125×125 MONO-CRYSTAL SILICON WAFER SPECIFICATION | ||
Parameter | Value | Unit |
Material type | CZ Mono-crystalline Silicon | |
Geometry | Pseudo square wafer | |
Wafer orientation | (1-0-0)±2 | Degree |
Conductivity type | P-type | |
Diameter | 150±0.5,165±0.5 | mm |
Dimension | 125×125±0.5 | mm |
Dopant | B | |
Resistivity | 0.5-3.0 | Ω-cm |
Oxygen content | ≤1E18 | atom/cm3 |
Carbon content | ≤5E16 | atom/cm3 |
Lifetime | ≥10 | μs |
Square angle | 90±0.5 | degree |
Thickness | 200±20 | μm |
TTV | ≤25 | μm |
Bow/Warp | ≤50 | μm |
Surface | As-cut,cleaned | |
Surface damage | Saw mark≤15 | μm |
Surface quality | No crack,no obvious saw mark,no obvious tactility,no abnormal spot,no stain | |
Edge defect | Depth≤0.5mm,no sharp edge |
156×156 MULTI-CRYSTAL SILICON WAFER SPECIFICATION | ||
Parameter | Value | Unit |
Material type | Multi-crystalline Silicon/Casting | |
Geometry | Square wafer | |
Conductivity type | P-type | |
Dimension | 156×156±0.5 | mm |
Corner | 2.0±0.5 | mm |
Dopant | B | |
Resistivity | 0.5-3.0 | Ω-cm |
Oxygen content | ≤8E17 | atom/cm3 |
Carbon content | ≤9E17 | atom/cm3 |
Lifetime | ≥2 | μs |
Square angle | 90±0.5 | degree |
Thickness | 200±20 | μm |
TTV | ≤30 | μm |
Bow/Warp | ≤75 | μm |
Surface | As-cut,cleaned | |
Surface damage | Saw mark≤15 | μm |
Surface quality | No crack,no obvious saw mark,no obvious tactility,no abnormal spot,no stain | |
Grain boundary direction | Vertical to wafer surface | |
Edge defect | Depth≤0.5mm,no sharp edge |