125×125單晶硅片規格書 | ||
MONO-CRYSTAL SILICON WAFER SPECIFICATION | ||
參數(Parameter) | 數值(Value) | 單位(Unit) |
材料類型(Material type) | 單晶(CZ Mono-crystalline Silicon) | |
外型(Geometry) | 準方型(Pseudo square wafer) | |
晶圓方向(Wafer orientation) | (1-0-0)±2 | Degree |
導電類型(Conductivity type) | P-type | |
直徑(Diameter) | 150±0.5,165±0.5 | mm |
尺寸(Dimension) | 125×125±0.5 | mm |
摻雜物(Dopant) | B | |
電阻率(Resistivity) | 0.5-3.0 | Ω-cm |
氧含量(Oxygen content) | ≤1E18 | atom/cm3 |
碳含量(Carbon content) | ≤5E16 | atom/cm3 |
少子壽命(Lifetime) | ≥10 | μs |
方正度(Square angle) | 90±0.5 | degree |
厚度(Thickness) | 200±20 | μm |
厚度變化(TTV) | ≤25 | μm |
彎曲度(Bow/Warp) | ≤50 | μm |
表面(Surface) | 線切、表面潔凈(As-cut,cleaned) | |
表面損傷(Surface damage) | 切痕(Saw mark)≤15 | μm |
表面質量(Surface quality) | 不允許有裂紋,明顯刀痕,手感不明顯,無沾污和異常斑點(No crack,no obvious saw mark,no obvious tactility,no abnormal spot,no stain) | |
邊緣缺陷(Edge defect) | 切深≤0.5mm, 無尖銳邊緣(Depth≤0.5mm,no sharp edge) |
156×156多晶硅片規格書 | ||
MULTI-CRYSTAL SILICON WAFER SPECIFICATION | ||
參數(Parameter) | 數值(Value) | 單位(Unit) |
材料類型(Material type) | 多晶/鑄錠法(Multi-crystalline Silicon/Casting) | |
外型(Geometry) | 方型(Square wafer) | |
導電類型(Conductivity type) | P-type | |
尺寸(Dimension) | 156×156±0.5 | mm |
倒角(Corner) | 2.0±0.5 | mm |
摻雜物(Dopant) | B | |
電阻率(Resistivity) | 0.5-3.0 | Ω-cm |
氧含量(Oxygen content) | ≤8E17 | atom/cm3 |
碳含量(Carbon content) | ≤9E17 | atom/cm3 |
少子壽命(Lifetime) | ≥2 | μs |
方正度(Square angle) | 90±0.5 | degree |
厚度(Thickness) | 200±20 | μm |
厚度變化(TTV) | ≤30 | μm |
彎曲度(Bow/Warp) | ≤75 | μm |
表面(Surface) | 線切、表面潔凈(As-cut,cleaned) | |
表面損傷(Surface damage) | 切痕(Saw mark)≤15 | μm |
表面質量(Surface quality) | 不允許有裂紋,明顯刀痕,手感不明顯,無沾污和異常斑點(No crack,no obvious saw mark,no obvious tactility,no abnormal spot,no stain) | |
晶界走向(Grain boundary direction) | 晶界走向與硅片表面垂直(Vertical to wafer surface) | |
邊緣缺陷(Edge defect) | 切深≤0.5mm, 無尖銳邊緣(Depth≤0.5mm,no sharp edge) |