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硅片

125×125單晶硅片規格書
MONO-CRYSTAL SILICON WAFER SPECIFICATION

參數(Parameter)	數值(Value)	單位(Unit)
材料類型(Material type)	單晶(CZ Mono-crystalline Silicon)
外型(Geometry)	準方型(Pseudo square wafer)
晶圓方向(Wafer orientation)	（1-0-0）±2	Degree
導電類型(Conductivity type)	P-type
直徑(Diameter)	150±0.5,165±0.5	mm
尺寸(Dimension)	125×125±0.5	mm
摻雜物（Dopant)	B
電阻率(Resistivity)	0.5-3.0	Ω-cm
氧含量(Oxygen content)	≤1E¹⁸	atom/cm3
碳含量(Carbon content)	≤5E¹⁶	atom/cm3
少子壽命(Lifetime)	≥10	μs
方正度(Square angle)	90±0.5	degree
厚度(Thickness)	200±20	μm
厚度變化(TTV)	≤25	μm
彎曲度(Bow/Warp)	≤50	μm
表面(Surface)	線切、表面潔凈（As-cut,cleaned)
表面損傷(Surface damage)	切痕（Saw mark)≤15	μm
表面質量(Surface quality)	不允許有裂紋，明顯刀痕，手感不明顯，無沾污和異常斑點(No crack,no obvious saw mark,no obvious tactility,no abnormal spot,no stain)
邊緣缺陷(Edge defect)	切深≤0.5mm, 無尖銳邊緣(Depth≤0.5mm,no sharp edge)

156×156多晶硅片規格書
MULTI-CRYSTAL SILICON WAFER SPECIFICATION

參數(Parameter)	數值(Value)	單位(Unit)
材料類型(Material type)	多晶/鑄錠法(Multi-crystalline Silicon/Casting)
外型(Geometry)	方型(Square wafer)
導電類型(Conductivity type)	P-type
尺寸(Dimension)	156×156±0.5	mm
倒角（Corner)	2.0±0.5	mm
摻雜物（Dopant)	B
電阻率(Resistivity)	0.5-3.0	Ω-cm
氧含量(Oxygen content)	≤8E¹⁷	atom/cm3
碳含量(Carbon content)	≤9E¹⁷	atom/cm3
少子壽命(Lifetime)	≥2	μs
方正度(Square angle)	90±0.5	degree
厚度(Thickness)	200±20	μm
厚度變化(TTV)	≤30	μm
彎曲度(Bow/Warp)	≤75	μm
表面(Surface)	線切、表面潔凈（As-cut,cleaned)
表面損傷(Surface damage)	切痕（Saw mark)≤15	μm
表面質量(Surface quality)	不允許有裂紋，明顯刀痕，手感不明顯，無沾污和異常斑點(No crack,no obvious saw mark,no obvious tactility,no abnormal spot,no stain)
晶界走向（Grain boundary direction)	晶界走向與硅片表面垂直（Vertical to wafer surface)
邊緣缺陷(Edge defect)	切深≤0.5mm, 無尖銳邊緣(Depth≤0.5mm,no sharp edge)